These devices are designed to help protect sensitive telecommunication equipment from the hazards caused by overvoltage faults stemming from lightning, power contact, and power induction. They have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. Download this pdf file for more information on the technology behind SiBar Thyristors.
Part Number
VDM Max. (V)
VBO Max. (V)
IH Min. (mA)
VT Max. (V)
C1 @50V Typ. (pF)
SMA 50A Standard "SA" and "NSA" Devices
TVA170SA-L
170
265
150
4.0
20
TVA170NSA-L
170
220
150
4.0
20
TVA200SA-L
200
320
150
4.0
17
TVA220NSA-L
220
300
150
4.0
17
TVA270SA-L
270
365
150
4.0
16
TVA275NSA-L
275
350
150
4.0
16
SMB 50A Standard "SA" and "NSA" Devices
TVB058SA-L
58
77
150
4.0
43
TVB058NSA-L
58
77
150
4.0
44
TVB065NSA-L
65
88
150
4.0
41
TVB075NSA-L
75
98
150
4.0
34
TVB090NSA-L
90
130
150
4.0
31
TVB120NSA-L
120
160
150
4.0
24
TVB140NSA-L
140
180
150
4.0
23
TVB170SA-L
170
265
150
4.0
18
TVB170NSA-L
170
220
150
4.0
20
TVB180SA-L
180
219
150
4.0
30 (MAX)
TVB180NSA-L
180
240
150
4.0
19
TVB190NSA-L
190
260
150
4.0
19
TVB200SA-L
200
320
150
4.0
18
TVB220NSA-L
220
300
150
4.0
17
TVB270SA-L
270
365
150
4.0
15
TVB275NSA-L
275
350
150
4.0
15
TVB300SA-L
300
400
150
4.0
14
TVB320NSA-L
320
400
150
4.0
14
SMB 80A Standard "SB" and "NSB" Devices
TVB058NSB-L
58
77
150
4.0
67
TVB065NSB-L
65
88
150
4.0
64
TVB075NSB-L
75
98
150
4.0
63
TVB090NSB-L
90
130
150
4.0
49
TVB120NSB-L
120
160
150
4.0
38
TVB140NSB-L
140
180
150
4.0
36
TVB170NSB-L
170
220
150
4.0
29
TVB180NSB-L
180
240
150
4.0
29
TVB190NSB-L
190
260
150
4.0
28
TVB200SB-L
200
320
150
4.0
30
TVB220NSB-L
220
300
150
4.0
26
TVB270SB-L
270
350
150
4.0
25
TVB275NSB-L
275
350
150
4.0
23
TVB300SB-L
300
400
150
4.0
21
TVB320NSB-L
320
400
150
4.0
22
SMB 100A Standard "SC"and "NSC" Devices
TVB058NSC-L
58
77
150
4.0
114
TVB065NSC-L
65
88
150
4.0
103
TVB075NSC-L
75
98
150
4.0
90
TVB090NSC-L
90
130
150
4.0
79
TVB120NSC-L
120
160
150
4.0
72
TVB140NSC-L
140
180
150
4.0
66
TVB170SC-L
170
265
150
4.0
60
TVB170NSC-L
170
220
150
4.0
48
TVB180NSC-L
180
240
150
4.0
48
TVB190NSC-L
190
260
150
4.0
44
TVB200SC-L
200
320
150
4.0
55
TVB220NSC-L
220
300
150
4.0
41
TVB270SC-L
270
365
150
4.0
50
TVB275NSC-L
275
350
150
4.0
38
TVB300SC-L
300
400
150
4.0
47
TVB320NSC-L
320
400
150
4.0
35
Notes:
All electrical characteristics are measured at 25°C.
VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA.
VBO measured at 100V/µ
All parts are RoHS compliant
Symbol
Parameter
Definition
VDM
Maximum off-state
voltage
Maximum DC voltage that can be applied to the device while maintaining
it in the off-state condition.
VBO
Breakover voltage
Maximum voltage across the device at breakdown measured under a
specified voltage and current rate of rise.
IH
Hold current
Minimum current required to maintain the device in the on-state.
VT
On-state voltage
Voltage across the device in the on-state condition at a specified current (IT).
IDM
Off-state current
Maximum DC value of current that results from the application of the maximum
off-state voltage.
Additional Product Info
Part Numbering System for SiBar Thyristor Devices
Agency Recognition for SiBar Thyristor Devices
Standard
Title
File Number
UL
Transient Voltage Surge Suppressors
E179610
Recommended Pad Layout for SiBar Thyristor Devices
Part
Description
Tape and Reel
Quantity
Standard
Package
Recommended Pad Layout (millimeters/ inches)
Dimension
A (Nom.)
Dimension
B (Nom.)
Dimension
C (Nom.)
TVAxxxSA-L
5,000
20,000
2.000 (0.079)
2.000 (0.079)
2.000 (0.079)
TVAxxxNSA-L
5,000
20,000
2.000 (0.079)
2.000 (0.079)
2.000 (0.079)
TVBxxxSA-L
2,500
10,000
2.261 (0.089)
2.159 (0.085)
2.743 (0.108)
TVBxxxNSA-L
2,500
10,000
2.261 (0.089)
2.159 (0.085)
2.743 (0.108)
TVBxxxSB-L
2,500
10,000
2.261 (0.089)
2.159 (0.085)
2.743 (0.108)
TVBxxxNSB-L
2,500
10,000
2.261 (0.089)
2.159 (0.085)
2.743 (0.108)
TVBxxxSC-L
2,500
10,000
2.261 (0.089)
2.159 (0.085)
2.743 (0.108)
TVBxxxNSC-L
2,500
10,000
2.261 (0.089)
2.159 (0.085)
2.743 (0.108)
Recommended Solder Reflow and Rework for SiBar Thyristor Devices
Solder Reflow and Rework Recommendations for SiBar Thyristor Surge Protectors
SiBar thyristor devices are compatible with standard reflow and wave soldering techniques.
Solder Reflow
• Recommended reflow methods: IR, vapor phase oven, hot air oven.
• Always preheat the device to prevent excessive thermal shock and stress.
• Recommended maximum paste thickness of 0.25mm (0.010 in.).
• Devices may be cleaned using standard industry methods and solvents.
Solder Rework
• Use standard industry practices for the SiBar Thyristor Surge Protectors.
Operation beyond the maximum ratings or improper use may result in device damage and possible electrical arcing and flame.
The devices are intended for protection against damage caused by occasional overvoltage fault conditions and should not be used when repeated fault conditions or prolonged trip events are anticipated.
Device performance can be impacted negatively if devices are handled in a manner inconsistent with recommended electronic, thermal, and mechanical procedures for electronic components.